Shankar Dutt

PhD Student

60 Mills Road, Research School of Physics, Australian National University, Acton, Canberra 2601

Email: shankar.dutt@anu.edu.au

Bio

Born in India in March,97, I have a passion for research in physics and material science. I have both the skill set and professional background necessary to dive deep into the never-ending research world. Currently, I am a Doctoral Student at the Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University. 

I am working on the development of novel composite nanopore membranes. Using high-energy ion irradiation and chemical etching provides an industrially compatible technology for the fabrication of extremely small nanopores in a variety of materials. Combining this technology with 2D materials such as Graphene or ultra-thin film deposition enables the fabrication of nanopore membranes with desired functionalities that can be used in medical and biological sensors, ultrafiltration, and lab-on-the-chip applications. 

Latest Publication

van der Waals coefficients of the multi-layered MoS2 with alkali metals

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Cite as: Shankar Dutt et al 2020 Phys. Scr. 95 095506.    Click here to Access 

The van der Waals coefficients and the separation dependent retardation functions of the interactions between the atomically thin films of the multi-layered transition metal molybdenum disulfide (MoS2) dichalcogenides with the alkali atoms are investigated. First, we determine the frequency-dependent dielectric permittivity and intrinsic carrier density values for different layers of MoS2 by adopting various fitting models to the recently measured optical data reported by Yu and co-workers (2015 Sci. Rep. 5, 16 996) using spectroscopy ellipsometry. Then, dynamic electric dipole polarizabilities of the alkali atoms are evaluated very accurately by employing the relativistic coupled-cluster theory. We also demonstrate the explicit change in the above coefficients for different numbers of layers. These studies are highly useful for the optoelectronics, sensing and storage applications using layered MoS2.